Integrated circuit with complementary junction-isolated bipolar

Details Integrated circuit with complementary junction-isolated bipolar Integrated circuit with complementary junction-isolated bipolar

1989-11-01

1991-11-12

Hille, Rolf

357 34, 357 44, 357 48, H01L 2702

Patent

active

050652141

ABSTRACT:
An integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors, is disclosed. P-type dopant is implanted and diffused in an N-type substrate to form a sub-collector for a pnp transistor and also is implanted and diffused in the substrate to form a P-well for the sub-collector of an npn transistor. N-type material is then implanted and diffused into the P-well to form the npn sub-collector, and also is implanted in the substrate to form part of an isolation wall for the pnp transistor. A P-type epitaxial (epi) layer is grown over the N-type substrate. N-type material is implanted and diffused in the epi layer to complete the isolation wall for the pnp transistor, and to form the collector for the npn transistor. P-type and N-type material is implanted and diffused in the P-type epi layer to form the bases and emitters for the npn and pnp transistors.

REFERENCES:
patent: 4038680 (1977-07-01), Yagi et al.
patent: 4357622 (1982-11-01), Magdo et al.

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