Integrated circuit with complementary junction-isolated bipolar

Fishing – trapping – and vermin destroying

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437 74, 437 75, H01L 21331

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049698230

ABSTRACT:
Process for making an integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors, and novel chip made by such process. P-type dopant is implanted and diffused in an N-type substrate to form a sub-collector for a pnp transistor and also is implanted and diffused in the substrate to form a P-well for the sub-collector of an npn transistor. N-type material is then implanted and diffused into the P-well to form the npn sub-collector, and also is implanted in the substrate to form part of an isolation wall for the pnp transistor. A P-type epitaxial (epi) layer is grown over the N-type substrate. N-type material is implanted and diffused in the epi layer to complete the isolation wall for the pnp transistor, and to form the collector for the npn transistor. P-type and N-type material is implanted and diffused in the P-type epi layer to form the bases and emitters for the npn and pnp transistors.

REFERENCES:
patent: 3575741 (1971-04-01), Murphy
patent: 3596149 (1971-07-01), Makimato
patent: 3697337 (1972-10-01), Stehlin
patent: 4032372 (1977-06-01), Vora
patent: 4054899 (1977-10-01), Stehlin
patent: 4168997 (1979-09-01), Compton
patent: 4379726 (1983-04-01), Kumamuru
patent: 4397622 (1982-11-01), Magda

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