Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Patent
1997-05-12
1999-09-07
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
257577, 327513, H01L 3158
Patent
active
059491221
ABSTRACT:
A monolithic, integrated semiconductor circuit comprising a high-voltage ice (210) with a predetermined reverse-conduction threshold comprising a chain of zener diodes (220-240). Device 210 is connected in series with a thermal compensation device (250) constituted by a plurality of Vbe multipliers connected in series with one another. Each of the Vbe multipliers is formed by a resistive divider (R1i, R2i) and a low-voltage transistor (Ti) or two or more low-voltage transistors in a Darlington configuration.
REFERENCES:
patent: 3497821 (1970-02-01), Rongen et al.
patent: 3723776 (1973-03-01), Schulz
patent: 3953254 (1976-04-01), Voldman
patent: 4749889 (1988-06-01), Lagoni et al.
Co.Ri.M.Me-Consorzio per la Ricerca Sulla Microelettonica Nel Me
Crane Sara
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