Integrated circuit with a device having a predetermined reverse

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature

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Details

257577, 327513, H01L 3158

Patent

active

059491221

ABSTRACT:
A monolithic, integrated semiconductor circuit comprising a high-voltage ice (210) with a predetermined reverse-conduction threshold comprising a chain of zener diodes (220-240). Device 210 is connected in series with a thermal compensation device (250) constituted by a plurality of Vbe multipliers connected in series with one another. Each of the Vbe multipliers is formed by a resistive divider (R1i, R2i) and a low-voltage transistor (Ti) or two or more low-voltage transistors in a Darlington configuration.

REFERENCES:
patent: 3497821 (1970-02-01), Rongen et al.
patent: 3723776 (1973-03-01), Schulz
patent: 3953254 (1976-04-01), Voldman
patent: 4749889 (1988-06-01), Lagoni et al.

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