Integrated circuit which uses a damascene process for producing

Details Integrated circuit which uses a damascene process for producing Integrated circuit which uses a damascene process for producing

1998-08-11

2000-11-21

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, 257776, H01L 2348

Patent

active

061507210

ABSTRACT:
An improved multilevel interconnect structure is provided. The interconnect structure includes several levels of conductors, wherein conductors on one level are staggered with respect to conductors on another level. In densely spaced interconnect areas, interposed conductors are drawn to dissimilar elevational levels to lessen the capacitive coupling between the interconnects. By staggering every other interconnect line in the densely patterned areas, the interconnects are capable of carrying a larger amount of current with minimal capacitive coupling therebetween.

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