Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1994-04-11
1996-11-05
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
313306, 313309, 313310, H01L 2906, H01J 102
Patent
active
055720420
ABSTRACT:
An integrated circuit electronic grid device includes first and second metal layers wherein the metal layers are vertically disposed within a substitute. A layer of a dielectric medium is disposed between the metal layers and a third metal layer is spaced apart from the second metal layer and insulated from the second metal layer by another layer of a dielectric medium. The first and second metal layers are biased with respect to each other to cause a flow electrons from the first metal layer toward the second metal layer. The second metal layer is provided with a large plurality of holes adapted for permitting the flow of electrons to substantially pass therethrough and to travel toward the third metal layer. A fourth metal layer is spaced apart from the third metal layer to collect the electrons wherein the third metal layer is also provided with a large plurality of holes to permit the electrons to flow therethrough and continue toward the fourth metal layer. The third metal layer is coupled to a lead to permit it to serve as a control grid for modulating the flow of electrons.
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Saadat Irfan
Thomas Michael E.
Murray William H.
National Semiconductor Corporation
Prenty Mark V.
Roddy Richard J.
Rosenthal Robert E.
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