Integrated circuit using a back gate voltage for burn-in operati

Details Integrated circuit using a back gate voltage for burn-in operati Integrated circuit using a back gate voltage for burn-in operati

1998-12-15

1999-10-05

Bowers, Charles

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

H01L 2100

Patent

active

059637790

ABSTRACT:
Integrated circuit architectures and methods of operation are provided that allow for the connection of a negative back-gate bias voltage to substrate contacts 24, 90, and 56 during burn-in operations. Accordingly, latch up conditions are prevented during burn-in operations when a circuit is especially vulnerable to such conditions and a grounded substrate is provided to allow for the most efficient operation of the circuit during normal conditions.

REFERENCES:
patent: 5528538 (1996-06-01), Sakura et al.
patent: 5633825 (1997-05-01), Sakura et al.

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