Integrated circuit trench cell

Details Integrated circuit trench cell Integrated circuit trench cell

1986-05-20

1987-08-11

James, Andrew J.

357 51, 357 55, H01L 2978, H01L 2906

Patent

active

046865527

ABSTRACT:
A two-device trench cell having a transistor surrounded by a capacitor. This combined capacitor and transistor cell can be used as a memory cell. The capacitor is first fabricated into the walls of a trench leaving a narrowed trench into which a vertical metal-oxide-semiconductor field-effect-transistor (MOSFET) may be fabricated. One of the plates of the capacitor doubles as a source/drain layer of the transistor.

REFERENCES:
patent: 4462040 (1984-07-01), Ito et al.
patent: 4467450 (1984-08-01), Kuo
patent: 4577395 (1986-03-01), Shibata

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