Integrated circuit transistor

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357 35, 357 48, H01L 2972

Patent

active

041258533

ABSTRACT:
Several embodiments of isolated lateral transistors are shown. The emitter and collector electrodes of each embodiment are formed in the same processing step as the region which isolates the transistor from other structures. Consequently, the emitter and collector electrodes are each relatively heavily doped and extend to an underlying buried layer over which the transistor is formed. The heavy doping and the deep penetration of the collector and emitter diffusions tend to increase transistor efficiency; and since the emitter and collector electrodes are formed in the same processing step as the isolation diffusion, there is a reduction in processing complexity.

REFERENCES:
patent: 3524113 (1970-08-01), Agusta et al.
patent: 3891480 (1975-06-01), Fulkerson
patent: 3911470 (1975-10-01), Ruegg
patent: 3994011 (1976-11-01), Misawa et al.

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