Integrated circuit transistor

Details Integrated circuit transistor Integrated circuit transistor

1994-12-06

2000-05-16

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257327, 257336, 257387, 257550, 257344, 257408, 257329, 257335, 257337, 257338, 257339, H01L 2976, H01L 2994, H01L 31062

Patent

active

060640774

ABSTRACT:
A method for fabricating an integrated circuit transistor begins with doping the substrate in the device active areas after field oxide regions have been formed. This dopant helps to reduce short channel transistor effects. A thin layer of epitaxial silicon is then grown over the substrate active regions. A field effect transistor is formed in the epitaxial layer and underlying substrate. The transistor channel region is in the relatively lightly doped epitaxial layer, but the underlying doped substrate layer helps minimize short channel effects.

REFERENCES:
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4939386 (1990-07-01), Shibata et al.
patent: 5196908 (1993-03-01), Kusunoki et al.
patent: 5245208 (1993-09-01), Eimori
7th Biennial University/Government/Industry Microelectronics Symposium, Rochester, NY, Jun. 11, 1987, pp. 28-33, F. C. Jain "Improved LDD-FET structures with lightly doped n- sheaths around the n+ source/drain regions".

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