Integrated circuit system with MOS device

Details Integrated circuit system with MOS device Integrated circuit system with MOS device

2011-04-26

2011-04-26

Koval, Melissa J (Department: 2858)

Semiconductor device manufacturing: process

With measuring or testing

C438S011000, C438S017000, C438S019000, C324S686000, C257S048000

Reexamination Certificate

active

07932103

ABSTRACT:
An integrated circuit system includes measuring capacitance for a base structure between a base gate and a base connector thereof, measuring capacitance for a test structure between a test gate and a test connector thereof, the test structure having the test gate, a test dielectric, and the test connector with the test dielectric extending thereunder, and determining a difference between the capacitances of the base structure and the test structure to determine parasitic capacitance for the base structure between the base gate and the base connector thereof.

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patent: 7405090 (2008-07-01), Jang
patent: 2005/0085932 (2005-04-01), Aghababazadeh et al.

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