Integrated circuit system with dummy region

Details Integrated circuit system with dummy region Integrated circuit system with dummy region

2008-09-23

2010-06-22

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

Reexamination Certificate

active

07741719

ABSTRACT:
An integrated circuit system comprised by forming a first region, a second region and a third region within a dielectric over a substrate. The first region includes tungsten plugs. The second region is formed adjacent at least a portion of the perimeter of the first region and the third region is formed between the first region and the second region. An opening is formed in the third region and a material is deposited within the opening for preventing erosion of the first region.

REFERENCES:
patent: 5909628 (1999-06-01), Chatterjee et al.
patent: 5916855 (1999-06-01), Avanzino et al.
patent: 6093631 (2000-07-01), Jaso et al.
patent: 6849946 (2005-02-01), Sethuraman et al.
patent: 2002/0106886 (2002-08-01), Sethuraman et al.

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