Integrated circuit switching network using low substrate leakage

Details Integrated circuit switching network using low substrate leakage Integrated circuit switching network using low substrate leakage

1976-12-03

1978-12-19

Clawson, Jr., Joseph E.

357 44, 357 45, 357 51, 357 64, 357 91, H01L 2974

Patent

active

041308271

ABSTRACT:
A semiconductor junction-isolated PNPN crosspoint switch array has a plurality of crosspoint switches that are each formed of four regions of alternating conductivity type in a semiconductor substrate. Low enough leakage to allow the crosspoint switch array to be used in large telephone switching systems is achieved by proper selection of the thickness of the semiconductor regions and by appropriate gold doping thereof.

REFERENCES:
patent: 3441815 (1969-04-01), Pollock et al.
patent: 3640783 (1972-02-01), Bailey
patent: 3786425 (1974-01-01), Hetherington et al.
patent: 3872493 (1975-03-01), Roberts et al.

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