Integrated circuit substrate charge pump

Details Integrated circuit substrate charge pump Integrated circuit substrate charge pump

1978-08-17

1980-09-16

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307200A, 307237, 307285, 307303, H03K 102, H03K 112, H03K 364, H03K 326

Patent

active

042232384

ABSTRACT:
An integrated circuit is disclosed which includes a charge pump adapted for biasing the substrate of a monolithic integrated circuit containing bipolar transistors. An oscillator operating under the control of a control input provides pulsed output signals for driving a diode-capacitor voltage multiplier network which generates a substrate bias voltage. A feedback network including a zener diode senses the substrate voltage, and switching action of the zener diode operates to selectively enable and disable the oscillator for regulating the substrate bias voltage.

REFERENCES:
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patent: 3509446 (1970-04-01), Mullaly
patent: 3609414 (1971-09-01), Pleshko et al.
patent: 3750018 (1973-07-01), Leone et al.
patent: 3794862 (1974-02-01), Jenne
patent: 3806741 (1974-04-01), Smith
patent: 4024417 (1977-05-01), Heuber et al.
patent: 4028564 (1977-06-01), Streit et al.
patent: 4049980 (1977-09-01), Maitland
patent: 4115710 (1978-09-01), Lou
patent: 4142114 (1979-02-01), Green
Frantz, "Threshold Voltage Control for N-Channel MOSFET Devices", IBM Tech. Discl. Bull., vol. 12, No. 12, p. 2078, 5/1970.
Dickson "On Chip High-Voltage Generation in MNOS IC using an Improved Voltage Multiplier Technique"; IEEE-JSSC, vol. SC-11, No. 3, pp. 374-378; 6/1976.

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