Integrated circuit structures having polycrystalline electrode c

Details Integrated circuit structures having polycrystalline electrode c Integrated circuit structures having polycrystalline electrode c

1989-01-31

1991-11-19

Hille, Rolf

357234, 357 44, 357 45, 357 46, 357 34, H01L 2904, H01L 2910, H01L 2702, H01L 2972

Patent

active

050670026

ABSTRACT:
A process is disclosed for fabricating improved integrated circuit devices. In accordance with one embodiment of the invention integrated devices are fabricated by a process which produces small device areas without relying upon restrictive photolithography tolerances. The process uses four polycrystalline silicon layers to fabricate and contact the device regions, to achieve a relatively planar structure, and to reduce the size of device regions below normal photolithographic tolerances. The process uses a master mask to define the basic footprint of the device in combination with easy to align block-out masks in each lithography step. Means and methods for many types of devices such as complementary lateral and vertical bipolar transistors, JFETs, Sits, MOSFETs, resistors, diodes, capacitors and other devices which can be simultaneously fabricated are also described.

REFERENCES:
patent: Re30282 (1980-05-01), Hunt et al.
patent: 4110126 (1978-08-01), Bergeron et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4319932 (1982-03-01), Jambotkar
patent: 4324038 (1982-04-01), Chang et al.
patent: 4381953 (1983-05-01), Ho et al.
patent: 4430793 (1984-02-01), Hart
patent: 4443932 (1984-04-01), Mastroanni et al.
patent: 4445967 (1984-05-01), Kameyama
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4495010 (1985-01-01), Kranzer
patent: 4516316 (1985-05-01), Haskell
patent: 4536950 (1985-08-01), Sadamatsu et al.
patent: 4545113 (1985-10-01), Vora
patent: 4545114 (1985-10-01), Ito et al.
patent: 4581319 (1986-04-01), Wieder et al.
patent: 4590666 (1986-05-01), Goto
patent: 4593453 (1986-06-01), Tam et al.
patent: 4602419 (1986-07-01), Harrison
patent: 4602421 (1986-07-01), Lee et al.
patent: 4604641 (1986-08-01), Konishi
patent: 4604789 (1986-08-01), Bourassa
patent: 4608589 (1986-08-01), Goth et al.
patent: 4611384 (1986-09-01), Bencuya
patent: 4612701 (1986-09-01), Cox
patent: 4640721 (1987-02-01), Uehara et al.
patent: 4641170 (1987-02-01), Ogura et al.
patent: 4641416 (1987-02-01), Iranmesh et al.
patent: 4641419 (1987-02-01), Kudo
patent: 4648909 (1987-03-01), Krishna
patent: 4659428 (1987-04-01), Maas et al.
patent: 4689872 (1987-09-01), Appels et al.
patent: 4712125 (1987-12-01), Bhatia et al.
Jambotkar et al., "Reducing the device size of polysilicon base transistor", IBM Tech. Bull.; 12/82, vol. 25, No. 7B, pp. 4011-4015.
Anantha et al., "Integrated Vertical Channel JFET and Method of Manufacture"; IBM Tech. Bull.; 4/82, vol. 24, No. 11B, pp. 6004-6007.
Dockerty, "Transistor Process Equipment", IBM Tech. Bull., vol. 26, No. 10A, Mar. 1984, pp. 5124-5126.
Tang et al., "Devices Structures and Technology", IEEE Internatl. Solid State Circuits Conference, vol. 25, 1982, Feb., N.Y., pp. 242-243.
"At IEDM, New Ways to Boost Chip Speed and Density", Electronics, Nov. 27, 1986, pp. 66-68.
Proceedings of the 1986 Bipolar Circuits and Technolog Meeting, Minneapolis, Minn., 9-11-12-1986, IEEE Twin Cities Section, pp. 33-40.

Affiliated with

Also associated with

Rating

Integrated circuit structures having polycrystalline electrode c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit structures having polycrystalline electrode c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit structures having polycrystalline electrode c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1373850