Integrated circuit structures having a boron- and...

Details Integrated circuit structures having a boron- and... Integrated circuit structures having a boron- and...

2006-10-26

2009-02-24

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S279000, C257S616000, C257SE21182, C257SE31046, C438S752000, C438S933000

Reexamination Certificate

active

07495250

ABSTRACT:
A method for forming an etch-stop layer and a resulting structure fabricated therefrom. The etch-stop layer is a silicon-germanium layer having a ratio of silicon to germanium of about 50:1 or less, a boron layer formed within the silicon-germanium layer where the boron layer has a full-width half-maximum (FWHM) thickness value of less than 50 nanometers, and a carbon layer formed within the silicon-germanium layer where the carbon layer has an FWHM thickness value of less than 50 nanometers. A ratio of boron to carbon in the etch-stop layer is in a range of about 0.5 to 1.5.

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