Integrated circuit structure with a gap between resistor film an

Details Integrated circuit structure with a gap between resistor film an Integrated circuit structure with a gap between resistor film an

1998-03-24

2000-11-21

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making passive device

Resistor

438422, 438756, 296101, H01L 2120

Patent

active

061502278

ABSTRACT:
An integrated circuit structure comprises a conductor film that serves as a passive element or an interconnection, and a silicon substrate. A cavity is disposed between the substrate and the conductor film and thus underneath the conductor film. The substrate is formed by forming an island of oxide film in a surface of the substrate, and then wet etching the island from the surface of the substrate thereby forming the cavity.

REFERENCES:
patent: 5098856 (1992-03-01), Beyer et al.
patent: 5599725 (1997-02-01), Dorleans et al.
patent: 5606192 (1997-02-01), Harada
patent: 5607869 (1997-03-01), Yamazaki
patent: 5719424 (1998-02-01), Ahmad et al.
patent: 5877059 (1999-03-01), Harward
patent: 6004832 (1999-12-01), Haller et al.

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