Integrated circuit structure including CMOS devices protected by

Details Integrated circuit structure including CMOS devices protected by Integrated circuit structure including CMOS devices protected by

1994-08-30

1996-10-01

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257324, 257391, 257640, 257788, 437 40, 437228, 437235, 437241, 437913, H01L 2934, H01L 21265

Patent

active

055613195

ABSTRACT:
A CMOS integrated circuit structure is disclosed having a patterned nitride passivation layer, wherein the nitride is patterned such that it does not overlie the thin gate oxide portions of one or more of the MOS devices. When protection against the effects of external radiation is desired, the thin gate oxide areas of the PMOS devices are left uncovered by the patterned nitride passivation layer. When protection is desired against the effects of internally generated "hot electrons", the thin gate oxide areas of the NMOS devices are left uncovered by the patterned nitride passivation layer.

REFERENCES:
patent: 4936928 (1990-06-01), Shaw et al.
patent: 5034798 (1991-07-01), Ohsima
patent: 5068697 (1991-11-01), Noda et al.
patent: 5258645 (1993-11-01), Sato
Hatano, Hiroshi, et al., "Total Dose Radiation-Hardened Latch-Up Free CMOS Structures for Radiation-Tolerant VLSI Designs", IEEE Trans. Nucl. Sci., vol. NS-33, No. 6, 1986.

Affiliated with

Also associated with

Rating

Integrated circuit structure including CMOS devices protected by does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit structure including CMOS devices protected by, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit structure including CMOS devices protected by will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1503746