Integrated circuit structure having regions of doping concentrat

Details Integrated circuit structure having regions of doping concentrat Integrated circuit structure having regions of doping concentrat

1978-04-21

1980-05-27

Larkins, William D.

Metal treatment

Stock

Ferrous

357 20, 357 42, 357 51, 357 89, 148187, H01L 2978, H01L 2704, H01L 2122

Patent

active

042053420

ABSTRACT:
A CMOS integrated circuit structure is provided having circuit elements which can function as high resistances or stable current sources. The circuit elements include a region of intermediate doping which has a surface concentration between that of a substrate and a homogeneous region of a doped pocket formed therein. The region of intermediate doping is formed by the vicinity of two pocket edges, these edges being separated by a distance which is substantially not greater than twice the length of the lateral diffusion of the doping of the pockets.

REFERENCES:
patent: 3374406 (1968-03-01), Wallmark
patent: 3436622 (1969-04-01), Warner, Jr.
patent: 3593069 (1971-07-01), Madden
patent: 3608189 (1971-09-01), Gray
patent: 3646665 (1972-03-01), Kim
patent: 3821776 (1974-06-01), Hayashi et al.
patent: 3898105 (1975-08-01), Mai et al.
patent: 3967295 (1976-06-01), Stewart

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