Integrated circuit structure having an air dielectric and dielec

Details Integrated circuit structure having an air dielectric and dielec Integrated circuit structure having an air dielectric and dielec

1997-09-03

1998-08-25

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257508, 257758, H01L 2900, H01L 2348, H01L 2352, H01L 2940

Patent

active

057985596

ABSTRACT:
A method of making an integrated circuit interconnect structure having air as the effective dielectric between metallization layers includes the steps of: a) providing an air dielectric formation layer of a sacrificial material over a substrate; b) forming a pillar holes in the air dielectric formation layer; c) filling the pillar holes with a non-sacrificial material; d) constructing a metallization layer over the sacrificial air dielectric formation layer and nonsacrificial material pillars; and e) applying an isotropic etchant to the interconnect structure to remove the sacrificial material, leaving the non-sacrificial material pillars for mechanical support of the metallization layer. An interconnect structure having an air dielectric includes a bottom metallization layer, a top metallization layer, and a plurality of pillars separating the bottom and top metallization layers and mechanically supporting the top metallization layer. Additional similar interconnect structures can be stacked over a base interconnect structure.

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M.E. Thomas J.A. Saadat, and S. Sekigahama, "VLSI Multilevel Micro-Coaxial Interconnects for High Speed Devices," Fairchild Research Center, National Semiconductor Corp., Santa Clara, CA, CH2865-4/90/0000-0055 1990 IEEE.

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