Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-02-28
2006-02-28
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S779000, C257S433000
Reexamination Certificate
active
07005719
ABSTRACT:
An apparatus comprising an integrated circuit structure is provided. The integrated circuit structure comprises a substrate and a photoreceiver. The substrate has a first side and a second side opposite the first side and includes a first light passage area operable to allow light to pass through. The photoreceiver has an aperture located on a first side of the photoreceiver and is flip-chip mounted to the substrate such that the first side of the photoreceiver faces the second side of the substrate. The photoreceiver is operable to translate light signals received through the aperture into digital signals and to transmit the digital signals. The first light passage area is aligned with the aperture of the photoreceiver such that the light signals may be received through the light passage area and into the aperture of the photoreceiver.
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Brady III Wade James
Clark S. V.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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