Integrated circuit structure for a quality check of a semiconduc

Details Integrated circuit structure for a quality check of a semiconduc Integrated circuit structure for a quality check of a semiconduc

1986-08-27

1988-04-19

James, Andrew J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

Frequency of cyclic current or voltage

357 231, 357 45, 324158T, 324158R, H01L 2166, H01L 2944, H01L 2952

Patent

active

047393882

ABSTRACT:
An integrated circuit structure to be built on a semiconductor substrate wafer for the purpose of undertaking a quality check of the wafer has a plurality of field effect transistors laterally disposed in the same close adjacency as transistors which are to be manufactured on a chip using the wafer material. Each field effect transistor has its own well structure, its own source structure, and its own drain structure. The individual field effect transistors have pads allocated thereto at an edge of the structure. Each transistor source/drain structure is connected to the pads by a conductor, the totality of these conductors having width and/or length dimensions so that each run has approximately the same resistance. Only one common gate conductor for all of the transistors is provided.

REFERENCES:
patent: 3983479 (1976-09-01), Lee et al.
patent: 4034399 (1977-07-01), Drukier
patent: 4144493 (1979-03-01), Lee et al.
patent: 4288911 (1981-09-01), Ports
patent: 4516071 (1985-05-01), Beuhler
patent: 4538105 (1985-08-01), Ausschnitt
patent: 4584595 (1986-04-01), Kammiller
"A Joint Course: Designing with ULA's, Part 1: Technology and Circuit Elements", Elec. Engr., vol. 54, No. 663, Mar. 1982, pp. 53-57.
"Introduction of an Ultra Fast 8000-Gate CMOS Gate Array", the 2nd Intl. Conference on Semi-Custom ICs, Nov. 1982, pp. 1-7.

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