Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-04-25
1998-06-30
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257535, 257516, 257520, H01L 2900
Patent
active
057738718
ABSTRACT:
An integrated circuit structure and a method of fabrication thereof are provided. In particular, fully planarized, trench isolated semiconductor regions, e.g. comprising doped polysilicon, are provided in an integrated circuit substrate. These polysilicon regions have a smooth surface, substantially coplanar with the substrate surface, provided by chemical mechanical polishing. The near zero topography substrate provides for formation thereon of integrated circuit structures including e.g. capacitors, resistors, thin film capacitors, and interconnects, in the polysilicon trench regions at the same process level as devices formed in the semiconductor substrate. Thus a simple and flexible process for formation of improved device structures is provided, compatible with known Bipolar, CMOS and Bipolar-CMOS processes.
REFERENCES:
patent: 3865649 (1975-02-01), Beasom
patent: 4879585 (1989-11-01), Usami
patent: 5352923 (1994-10-01), Boyd et al.
Boyd John M.
Ellul Joseph P.
Tay Sing P.
de Wilton Angela C.
Loke Steven H.
Northern Telecom Limited
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