Integrated circuit structure and manufacturing method thereof

Details Integrated circuit structure and manufacturing method thereof Integrated circuit structure and manufacturing method thereof

2007-07-06

2011-10-04

Lee, Eugene (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S760000, C257S774000, C257SE23141, C257SE21495, C438S622000, C438S624000

Reexamination Certificate

active

08030778

ABSTRACT:
An integrated circuit structure is provided. The integrated circuit structure includes a dielectric layer, a conductive structure, a low-k dielectric layer and a plug. The conductive structure is disposed in the dielectric layer, having a recess portion. The low-k dielectric layer is disposed on the dielectric layer. The plug is disposed in the low-k dielectric layer and has a protruding bonding portion on the bottom of the plug. The bonding portion is extended into the dielectric layer and connected to the recess portion of the conductive structure.

REFERENCES:
patent: 5309025 (1994-05-01), Bryant et al.
patent: 5736791 (1998-04-01), Fujiki et al.
patent: 2001/0036740 (2001-11-01), Shields et al.
patent: 2003/0001241 (2003-01-01), Chakrabarti et al.
patent: 2005/0112957 (2005-05-01), Yang et al.
patent: 2005/0186782 (2005-08-01), Burke et al.
patent: 2005/0275110 (2005-12-01), Maekawa et al.
patent: 2006/0081986 (2006-04-01), Clevenger et al.
patent: 2006/0088975 (2006-04-01), Ueda
patent: 2007/0032062 (2007-02-01), Lee et al.
patent: 2007/0077761 (2007-04-01), Lehr et al.
patent: 2007/0085211 (2007-04-01), Hamada
patent: 2008/0067680 (2008-03-01), Sakai et al.
patent: 469591 (2001-12-01), None
patent: 200527593 (2005-08-01), None
Wu, “Integrated Circuit Structure and Manufacturing Method Thereof”, Invention disclosure, Apr. 3, 2006.

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