Integrated circuit sensor

Measuring and testing – Gas analysis – Gas chromatography

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 26, G01N 2700, H01L 2984

Patent

active

046743197

ABSTRACT:
A polysilicon microstructure is formed on a silicon substrate. Beneath the microstructure, are diffused regions in the substrate. The microstructure is capacitively coupled to these diffused regions so that one such capacitor acts as an excitation capacitor and the other capacitor acts as a sense capacitor. By applying an AC voltage to the excitation capacitor, the electrostatic force between the substrate and the microstructure changes causing a mechanical vibration in the microstructure. A DC voltage is applied to the sense capacitor. The mechanical vibration, which changes its capacitance, will develop a current through the sense capacitor. A phenomenon may then be sensed by the vibrating microstructure. A polymer film disposed on the microstructure can sorb a gas of interest. As the mass of the polymer film and vibrating microstructure increases, its frequency or phase changes. The current through the sense capacitor will exhibit a commensurate frequency or phase shift. Detection of such frequency or phase shift in the sense capacitor current will transduce the detection of the vapor of interest.

REFERENCES:
patent: 4471647 (1984-09-01), Jerman et al.
patent: 4549427 (1985-10-01), Kolesar
patent: 4571661 (1986-02-01), Hoshino
Howe & Muller, "Polycrystalline Silicon Micromechanical Beams", J. of Electrochemical Society, V130, #6, pp. 1420-1423, 6/83.
Howe & Muller, "Polycrystalline Silicon Micromechanical Beams", Electrochemical Society Mtg, Montreal, Canada, 5/82 (abstract 118).
Howe & Muller, "Polycrystalline and Amorphous Silicon Micromechanical Beams: Annealing & Mechanical Prop.,", (accepted by) Sensors & Actuators, 5/83.
Petersen, "Silicon as a Mechanical Material", Proceedings of the IEEE, vol. 70, #5, pp. 420-457, May 1982.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-714026

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.