Integrated circuit semiconductor device with reduced power dissi

Details Integrated circuit semiconductor device with reduced power dissi Integrated circuit semiconductor device with reduced power dissi

1986-05-12

1988-04-12

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307449, 307452, 307481, H03K 19096

Patent

active

047376660

ABSTRACT:
A semiconductor integrated circuit device includes a switch for switching an external clock; a signal generator for generating a power down signal for controlling said switch; said signal generator being responsive to an external signal input designating the status of the output of the microprocessor provided at the periphery of the device and an internal control signal of the device for producing said power down signal in a special combination logic state of said external signal input and said internal control signal; the device being set in a power dissipation reduction mode when said power down signal is generated.

REFERENCES:
patent: 4042841 (1977-08-01), Hills et al.
patent: 4381552 (1983-04-01), Nocilini et al.
patent: 4387449 (1983-06-01), Masuda
patent: 4512029 (1985-04-01), Brice
patent: 4581549 (1986-04-01), Aoyama et al.
patent: 4594519 (1986-06-01), Ohtani et al.
patent: 4627085 (1986-12-01), Yuen
8-Bit Parallel Microprocessor M5M80C88P, produced by Mitsubishi Elec. Co. Ltd.

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