Integrated circuit resistor fabrication using focused ion beam

Details Integrated circuit resistor fabrication using focused ion beam Integrated circuit resistor fabrication using focused ion beam

1990-08-20

1991-09-10

Prenty, Mark

Electrical resistors

Incased, embedded, or housed

Element in insulation with outer metallic sheath

357 45, 357 91, 338283, 338295, H01L 2702, H01L 2710, H01C 310, H01C 722

Patent

active

050478273

ABSTRACT:
A high value, precision resistor (10) includes a doped region (18) having a boustrophedonic (folded or meandering) shape formed in a substrate (12). At least one section of the doped region (18) is formed by implantation using a focused ion beam. Where the entire doped region (18) is formed by the focused ion beam, the length thereof is selected to be large (10 to 100 times the width of the boustrophedonic shape) to maximize the accuracy of the resistor (10) by averaging over variations in grain size and implant dose. Alternatively, a probe resistor (32) and a plurality of similar unconnected doped sections (28) may be formed by means such as photolithography and flood ion implantation. The probe resistor (32) is measured at the desired operating temperature to determine the ratio of the measured resistance to the desired design resistance value. The unconnected doped sections (28) are then interconnected by plugs (40, 42, 44, 46), formed with a focussed ion beam, to program the fabricated resistor to exactly the designed resistance value at the desired operating temperature.

REFERENCES:
patent: 3906430 (1975-09-01), Hareyama et al.
patent: 4725876 (1988-02-01), Kishi
"Basic Integrated Circuit Engineering", Hamilton and Howard, McGraw Hill, 1975, pp. 16-21.
"Polysilicon for Integrated Circuit Applications", by T. Kamins, Klower Academic Publishers, 1988, pp. 212-215.

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