Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2006-05-09
2006-05-09
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
With measuring or testing
C438S016000, C438S017000, C438S018000, C257S048000
Reexamination Certificate
active
07041514
ABSTRACT:
A method and apparatus provides the capability for activating, i.e., annealing or ablating, LASER activated fuses from the back-side of an integrated circuit chip using multiple-photon absorption techniques that allow the absorbed LASER energy to be highly localized in three dimensions. According to the invention, the photons from the LASER have an energy less than the band gap energy of the substrate material, therefore absorption in areas of the substrate other than the focal point is avoided. According to the invention, objects such as LASER activated fuses that lie either within the integrated circuit substrate, or on the opposite surface, i.e., the active surface, of the integrated circuit substrate can be accessed and activated by the LASER energy. Consequently, using the method of the invention, LASER activated fuses can be activated after the integrated circuit chip has been mounted in a flip-chip configuration and/or as part of a Multiple-Chip-Module.
REFERENCES:
patent: 5729041 (1998-03-01), Yoo et al.
patent: 6100116 (2000-08-01), Lee et al.
Gunnison McKay & Hodgson, L.L.P.
McKay Philip J.
Sun Microsystems Inc.
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