Integrated circuit protected against electrostatic discharges, w

Electricity: electrical systems and devices – Safety and protection of systems and devices – Transient responsive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

361 56, 361 91, 357 2313, H02H 904

Patent

active

048901873

ABSTRACT:
To protect integrated circuits as efficiently as possible against electrostatic discharges, by putting a diode in avalanche mode without untimely triggering of this avalance mode by overvoltages of non-electrostatic origin, the following solution is proposed: through an insulated gate surrounding the cathode of the diode, the threshold for transition into avalanche mode of the diode is modified according to the slope of the overvoltages appearing at the terminal to be protected. The gate is connected to the terminal by an integrating circuit in such a way that the overvoltages are applied to the gate with a certain delay, inducing a potential difference between the cathode and the gate which is all the greater as the front of the overvoltage is steep. The avalanche triggering threshold is higher in the latter case than in the former one, and it is thus distinguish between overvoltages of diverse origins.

REFERENCES:
patent: 4139935 (1979-02-01), Bertin et al.
patent: 4323942 (1982-04-01), Hartman et al.
patent: 4595941 (1986-06-01), Avery
patent: 4602268 (1986-07-01), Hartman et al.
patent: 4712152 (1987-12-01), Iio
patent: 4720737 (1988-01-01), Shirato
patent: 4733285 (1988-03-01), Ishioka et al.
patent: 4786956 (1988-11-01), Puar
patent: 4789917 (1988-12-01), Miller
patent: 4821089 (1989-04-01), Strauss
IBM Technical Disclosure Bulletin, vol. 23, No. 2, Jul. 1980.
IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr. 1985.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit protected against electrostatic discharges, w does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit protected against electrostatic discharges, w, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit protected against electrostatic discharges, w will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1580077

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.