Integrated circuit protected against electrostatic discharges, w

Details Integrated circuit protected against electrostatic discharges, w Integrated circuit protected against electrostatic discharges, w

1988-10-28

1989-12-26

Shoop, Jr., William M.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 56, 361 91, 357 2313, H02H 904

Patent

active

048901873

ABSTRACT:
To protect integrated circuits as efficiently as possible against electrostatic discharges, by putting a diode in avalanche mode without untimely triggering of this avalance mode by overvoltages of non-electrostatic origin, the following solution is proposed: through an insulated gate surrounding the cathode of the diode, the threshold for transition into avalanche mode of the diode is modified according to the slope of the overvoltages appearing at the terminal to be protected. The gate is connected to the terminal by an integrating circuit in such a way that the overvoltages are applied to the gate with a certain delay, inducing a potential difference between the cathode and the gate which is all the greater as the front of the overvoltage is steep. The avalanche triggering threshold is higher in the latter case than in the former one, and it is thus distinguish between overvoltages of diverse origins.

REFERENCES:
patent: 4139935 (1979-02-01), Bertin et al.
patent: 4323942 (1982-04-01), Hartman et al.
patent: 4595941 (1986-06-01), Avery
patent: 4602268 (1986-07-01), Hartman et al.
patent: 4712152 (1987-12-01), Iio
patent: 4720737 (1988-01-01), Shirato
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patent: 4786956 (1988-11-01), Puar
patent: 4789917 (1988-12-01), Miller
patent: 4821089 (1989-04-01), Strauss
IBM Technical Disclosure Bulletin, vol. 23, No. 2, Jul. 1980.
IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr. 1985.

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