Integrated circuit process with TiN-gate transistor

Details Integrated circuit process with TiN-gate transistor Integrated circuit process with TiN-gate transistor

1988-12-20

1990-06-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437201, 437 41, 437 47, 437 52, 437 60, 437 59, 437 56, 148DIG147, 148DIG113, H01L 21283

Patent

active

049314114

ABSTRACT:
Disclosed is an integrated circuit process which includes forming two types of active devices: a first set of IGFETs has silicide gates, and the second set has TiN gates. The same TiN thin film layer also provides local interconnect. Optionally the TiN-gate devices may be used for high-voltage devices and the silicide-gate devices used for logic devices. The TiN gates in the second set of transistors and the TiN interconnect are formed by providing a thin film insulator pattern, depositing a titanium layer overall, heating the titanium in a nitrogen bearing atmosphere, and subsequently etching the titanium nitride obtained.

REFERENCES:
patent: 4570328 (1986-02-01), Price et al.
patent: 4635347 (1987-01-01), Lien et al.
patent: 4772571 (1988-09-01), Scovell et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4811078 (1989-03-01), Tigelaar et al.
patent: 4814854 (1989-03-01), Tigelaar et al.
Wittmer, M. et al., "Applications of TiN Thin Films in Silicon Device Technology", Thin Solid Films, 93 (1982), pp. 397-405.

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