Integrated circuit photofabrication masks and methods for making

Details Integrated circuit photofabrication masks and methods for making Integrated circuit photofabrication masks and methods for making

1998-10-21

1999-11-02

Rosaasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059767332

ABSTRACT:
An attenuated phase shifting mask employs regions of increased light transmissivity adjacent the defined circuit pattern features. Such regions can be provided by partially oxidizing a secondary region of the halftone masking layer. The result is improved image resolution and depth of focus, and a minimization of image shortening effects. In a second primary embodiment, similar improvements, as well as well as sharper corner definition, are obtained by providing on a mask (conventional or phase shifting) a generally rounded, light diffracting topography at edges of the defined circuit pattern features. This can be accomplished, for an elongated hole feature, by depositing a layer of light transmissive material on a conventional mask structure to form a generally convex light transmitting surface overlying an edge of the masking layer. In the case of a line feature, the substrate can be etched to form a recessed region including a generally concave light transmissive surface extending beneath an edge portion of the masking layer.

REFERENCES:
patent: 4902899 (1990-02-01), Lin et al.
patent: 5045417 (1991-09-01), Okamoto
patent: 5248574 (1993-09-01), Kamon
patent: 5316896 (1994-05-01), Fukuda et al.
patent: 5397663 (1995-03-01), Uesawa et al.
patent: 5415952 (1995-05-01), Haruki et al.
patent: 5432044 (1995-07-01), Shimizu
patent: 5441835 (1995-08-01), Harazaki
patent: 5536602 (1996-07-01), Nakao
patent: 5733687 (1998-03-01), Tanaka et al.
K. Hashimoto et al., "The Application of Deep UV Phase Shifted-Single Layer Halftone Reticles to 256 Mbit Dynamic Randon Access Memory Cell Patterns", Jpn. J. Apl. Phys. vol. 33 (1994) pp. 6823-6830.
Ito et al., "Optimization of Optical Properties for Single-Layer Halftone Masks", SPIE vol. 2197, p. 99, Jan. 1994.
C. Harper et al., "Electronics Materials & Processes Handbook", 2d ed., 1994,.sctn. 10.4, pp. 10.33-10.39.

Affiliated with

Also associated with

Rating

Integrated circuit photofabrication masks and methods for making does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit photofabrication masks and methods for making, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit photofabrication masks and methods for making will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2132625