Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Reexamination Certificate
2008-11-19
2011-12-20
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
C257S698000, C257S738000, C257S777000, C257S778000, C257S780000, C257S784000, C257S786000, C257SE23010, C257SE23116, C257SE23123, C257SE21503, C257SE21506, C438S127000, C438S108000
Reexamination Certificate
active
08080885
ABSTRACT:
A method of manufacture of an integrated circuit packaging system includes: forming a first level contact on a first external connection level; forming a second level contact on a second external connection level next to the first external connection level; attaching a device adjacent the first level contact and the second level contact; attaching a first level device connector to the first level contact and the device; attaching a second level device connector to the second level contact and the device; and forming an encapsulant over the first level contact, the second level contact, the first level device connector, and the second level device connector.
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Chow Seng Guan
Huang Rui
Kuan Heap Hoe
Ishimaru Mikio
Stats Chippac Ltd.
Wilczewski Mary
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