Integrated circuit packaging system having through silicon...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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Details

C438S107000, C438S108000, C438S109000, C438S125000

Reexamination Certificate

active

07859099

ABSTRACT:
A method of manufacture of an integrated circuit packaging system includes: providing a through silicon via die having an interconnect through a silicon substrate; depositing a re-distribution layer on the through silicon via die and connected to the interconnects; mounting a structure over the through silicon via die; connecting the structure to the interconnect of the through silicon via die with a direct interconnect; and encapsulating the through silicon via die and partially encapsulating the structure with an encapsulation.

REFERENCES:
patent: 6617681 (2003-09-01), Bohr
patent: 7279795 (2007-10-01), Periaman et al.
patent: 7723159 (2010-05-01), Do et al.
patent: 2007/0090508 (2007-04-01), Lin et al.
patent: 2007/0158809 (2007-07-01), Chow et al.
patent: 2008/0272504 (2008-11-01), Do et al.
Definition of “overhang”; “McGraw-Hill Dictionary of Scientific and Technical Terms, Sixth Edition”, 2003, pp. 1505-1506, Publisher: McGraw-Hill, New York.

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