Integrated circuit package for semiconductor devices with...

Details Integrated circuit package for semiconductor devices with... Integrated circuit package for semiconductor devices with...

2005-01-11

2005-01-11

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

C257S784000, C257S786000, C257S676000, C257S691000, C257S696000, C257S698000, C257S787000, C257S728000, C257S724000

Reexamination Certificate

active

06841852

ABSTRACT:
A semiconductor integrated circuit package having a leadframe (108) that includes a leadframe pad (103a) disposed under a die (100) and a bonding metal area (101a) that is disposed over at least two adjacent sides of the die. The increase in the bonding metal area (101a) increases the number of interconnections between the metal area (101a) and the die (100) to reduce the electric resistance and inductance. Furthermore, the surface area of the external terminals radiating from the package's plastic body (106) is increased if not maximized so that heat can be dissipated quicker and external terminal resistances reduced. The integrated circuit is applicable for MOSFET devices and the bonding metal area (101a) is used for the source terminal (101). The bonding metal area may have a “L” shape, a “C” shape, a “J” shape, an “I” shape or any combination thereof.

REFERENCES:
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patent: 20030107120 (2003-06-01), Connah et al.

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