Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1974-11-15
1977-01-25
Moose, Harry
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307 10R, 317 31, H02H 322
Patent
active
040053423
ABSTRACT:
An overvoltage protection circuit in an integrated circuit for increasing the breakdown voltage of the integrated circuit between first and second terminals thereof. Diode-connected transistors are connected in series between the first terminal and a resistor. The resistor is connected to the base of a first transistor having its emitter connected to the second terminal and its collector connected to the base of a second transistor having its emitter connected to the second terminal and its collector connected to the first terminal. If an overvoltage applied between the first and second terminals exceeds the sum of the emitter-base reverse breakdown voltages of the diode-connected transistors, current flows into the base of the first transistor, causing it to saturate, thereby preventing the emitter-base junction of the second transistor from being forward biased. The collector to emitter breakdown voltage of the second transistor is thereby increased.
REFERENCES:
patent: 3581150 (1971-05-01), Kirk et al.
patent: 3585453 (1971-06-01), Kawai
patent: 3599042 (1971-08-01), Andrews
patent: 3668545 (1972-06-01), Von Recklinghausen
patent: 3868563 (1975-02-01), Hirata
Hoffman Charles R.
Moose Harry
Motorola Inc.
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