Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2011-03-01
2011-03-01
Mulpuri, Savitri (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S700000, C257S713000, C257S717000, C257S718000, C257S720000, C257SE21499, C257SE21502, C257SE21506, C257SE21536, C257SE21576
Reexamination Certificate
active
07898068
ABSTRACT:
Various apparatus and methods for improving the dissipation of heat from integrated circuit micro-modules are described. One aspect of the invention pertains to an integrated circuit package with one or more thermal pipes. In this aspect, the integrated circuit package includes multiple layers of a cured, planarizing dielectric. An electrical device is embedded within at least one of the dielectric layers. At least one electrically conductive interconnect layer is embedded within one or more of the dielectric layers. A thermal pipe made of a thermally conductive material is embedded in at least one associated dielectric layer. The thermal pipe thermally couples the electrical device with one or more external surfaces of the integrated circuit package. Various methods for forming the integrated circuit package are described.
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Deane Peter
Johnson Peter
Smeys Peter
Ahmadi Mohsen
Beyer Law Group LLP
Mulpuri Savitri
National Semiconductor Corporation
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