Integrated circuit method using double implant doping

Details Integrated circuit method using double implant doping Integrated circuit method using double implant doping

1987-01-30

1988-04-26

Roy, Upendra

Fishing, trapping, and vermin destroying

357 34, 357 91, 437 18, 437 20, 437 27, 437 31, H01L 21265, H01L 21225

Patent

active

047404787

ABSTRACT:
A process is disclosed for fabricating improved integrated circuit devices. In accordance with one embodiment of the invention integrated devices are fabricated by a four layer poly process which produces small device areas without relying upon restrictive photolithography tolerances. A master mask is used to define the basic footprint of the device in combination with easy to align block-out masks in each lithography step. A double implant doping process is used to control the Gummel number in the base of bipolar transistors and like regions. A shallow implant is placed in a screen oxide and a deep implant into the desired base location. The dopant saturated screen oxide prevents segregation of the deep base implant during subsequent heat treatment. The double implant process applies to many desired device structures.

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