Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-02-21
2010-11-09
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S230030, C365S163000, C365S230040
Reexamination Certificate
active
07830709
ABSTRACT:
A memory device comprises a plurality of memory cells, each of which comprising a first electrode, a second electrode and an active material arranged between the first electrode and the second electrode, wherein the memory cells are grouped into memory cell groups, each memory cell group defining a memory cell group area and being configured such that corresponding first electrodes are individually addressable, and corresponding second electrodes are commonly addressable via a common select device provided within the memory cell group area of the memory cell group.
REFERENCES:
patent: 6754124 (2004-06-01), Seyyedy et al.
patent: 6813176 (2004-11-01), Gilton et al.
patent: 7215568 (2007-05-01), Liaw et al.
patent: 7379328 (2008-05-01), Osada et al.
patent: 2006/0286709 (2006-12-01), Lung et al.
patent: 2008/0079047 (2008-04-01), Schmid
patent: 10 2004 026 002 (2005-12-01), None
ALTIS Semiconductor, SNC
Nguyen Tuan T.
Qimonda AG
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