Integrated circuit, method of manufacturing an integrated...

Details Integrated circuit, method of manufacturing an integrated... Integrated circuit, method of manufacturing an integrated...

2008-03-12

2010-12-21

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

C257S527000, C438S005000, C438S296000, C438S751000

Reexamination Certificate

active

07855435

ABSTRACT:
According to one embodiment of the present invention, an integrated circuit including a plurality of memory cells is provided. Each memory cell includes a resistivity changing memory element which includes a top electrode, a bottom electrode, and resistivity changing material being disposed between the top electrode and the bottom electrode. Each resistivity changing memory element is at least partially surrounded by a thermal insulating structure. The thermal insulating structures are arranged such that the dissipation of heat generated within the resistivity changing memory elements into the environment of the resistivity changing memory elements is lowered.

REFERENCES:
patent: 6586761 (2003-07-01), Lowrey
patent: 6613604 (2003-09-01), Maimon et al.
patent: 2002/0160551 (2002-10-01), Harshfield
patent: 2003/0096497 (2003-05-01), Moore et al.
patent: 2007/0210348 (2007-09-01), Song et al.
patent: 2008/0220560 (2008-09-01), Klersy

Affiliated with

Also associated with

Rating

Integrated circuit, method of manufacturing an integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit, method of manufacturing an integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit, method of manufacturing an integrated... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4214896