Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2007-04-16
2010-06-08
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257S002000, C257S004000, C257S040000, C257S522000, C257SE29087, C257SE31008, C438S095000, C438S421000, C438S900000
Reexamination Certificate
active
07732888
ABSTRACT:
According to one embodiment of the present invention, a memory cell array comprises a plurality of voids, the spatial positions and dimensions of the voids being chosen such that mechanical stress occurring within the memory cell array is at least partly compensated by the voids.
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Pinnow Cay-Uwe
Raberg Wolfgang
Altis Semiconductor SNC
Khan Farid
Monbleau Davienne
Qimonda AG
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