Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-06-05
1998-06-30
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257401, 257134, 257197, 257287, 257288, H01L 2974, H01L 310328, H01L 2976, H01L 2994
Patent
active
057738912
ABSTRACT:
In a sub-micron line width process, a first layer of polysilicon 13 is patterned into lines 1,2 spaced a predetermined distance. An oxide layer 11 is deposited. A second layer of polysilicon 14 is deposited on the insulating layer. A gate contact 19 or emitter contact 35 is formed from the second polysilicon layer 14. The gate 19 or emitter 35 is spaced from the lines 1,2 a distance approximately equal to the thickness of the second polysilicon layer 14.
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S. Wolf, "Silicon Processing For The VLSI Era", vol. 2, Process Integration, pp. 214-217, 1990.
Delgado Jose Avelino
Gaul Stephen Joseph
Clark Jhihan B.
Harris Corporation
Saadat Mahshid D.
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