Active solid-state devices (e.g. – transistors – solid-state diode – Superconductive contact or lead
Patent
1998-02-17
2000-07-11
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Superconductive contact or lead
257 37, 257662, 257663, 257750, 257 33, H01L 3900, H01L 2906, H01L 3922, H01L 2348
Patent
active
060877111
ABSTRACT:
The present invention discloses an integrated circuit that is wired with a high-temperature superconductive material that is superconductive at temperatures of about 70.degree. K and above, and methods of making the integrated circuit. The front-end manufactured semiconductor structure is patterned with a preferred precursor metal or metal oxide and a complementary compound is superposed and reacted to form wiring lines of superconductor ceramics that complete integrated circuits within the front-end manufactured semiconductor structure. The front-end manufactured semiconductor structure is alternatively patterned first with the complementary compound and the precursor metal is thinly patterned by ion implantation. The front-end manufactured semiconductor structure is then treated to form wiring lines of superconductor ceramics that complete integrated circuits within structure. The conductive lines, if formed within an oxidized portion of the complementary compound, are self-insulating by the presence of the oxided complementary compound. Operation of the devices is accomplished at "high" superconductive temperatures that cause improved solid state operation of the device, minimizing molecular vibrations and dislocation effects, and cause the wiring to be superconductive.
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Micro)n Technology, Inc.
Saadat Mahshid
Wilson Allan R.
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