Integrated circuit metallization with reduced electromigration

Details Integrated circuit metallization with reduced electromigration Integrated circuit metallization with reduced electromigration

1988-02-16

1990-05-01

Hille, Rolf

357 71, 357 54, H01L 2354, H01L 21441, H01L 21469

Patent

active

049223208

ABSTRACT:
The specification discloses a method and a device wherein circuit elements (10) are formed on the surface of a semiconductor body (12). A layer of oxide (22) is applied over the circuit element (10). An aperture (32) is opened through the oxide layer (22). The surface of oxide layer (22) is nonuniformly substantially roughened. A layer of metal (24) such as aluminum is formed over the oxide layer (22) and extends into the aperture (32) for contact with a portion of the device (10). The layer of metal (24) has increased granular structure and a roughened exterior surface to provide enhanced electromigration properties.

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patent: 4682204 (1987-07-01), Shiozaki et al.
patent: 4694116 (1987-09-01), Hayashi et al.

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