Integrated circuit mesa bipolar device on insulating substrate i

Details Integrated circuit mesa bipolar device on insulating substrate i Integrated circuit mesa bipolar device on insulating substrate i

1977-04-18

1978-11-28

Clawson, Jr., Joseph E.

357 4, 357 20, 357 34, 357 56, 357 44, H01L 2948

Patent

active

041278607

ABSTRACT:
A PNP bipolar transistor is protected by a Schottky barrier, in which an N- base of the device forms a Schottky diode with a metallizing which is used as the collector. No separate P- semiconductor region is provided as the collector. Such transistors may be combined with NPN transistors having integrated but distinct Schottky and collector electrodes.

REFERENCES:
patent: 3304469 (1967-02-01), Weimer
patent: 3602781 (1971-08-01), Hart
patent: 3742368 (1973-06-01), Gelabert
R. Broom, "Lateral Bipolar Transistor Having a Negative Resistance Characteristic," IBM Tech. Discl. Bull., vol. 14 #4, Sep. 1971, pp. 1343-1344.
G. Zeidenbergs, "Lateral PNP Transistor with Schottky Barrier Collector," IBM Tech. Discl. Bull., vol. 14 #11, Apr. 1972, p. 3248.

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