Integrated circuit, memory module, and method of...

Details Integrated circuit, memory module, and method of... Integrated circuit, memory module, and method of...

2011-02-22

2011-02-22

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S421000, C257SE43001, C257SE43006, C438S048000, C365S158000

Reexamination Certificate

active

07893511

ABSTRACT:
An integrated circuit includes a plurality of magnetic tunneling junction stacks, each magnetic tunneling junction stack including a reference layer, a barrier layer and a free layer, wherein the plurality of magnetic tunneling junction stacks share a continuous common reference layer.

REFERENCES:
patent: 5793697 (1998-08-01), Scheuerlein
patent: 2004/0196704 (2004-10-01), Andrei et al.
patent: 2005/0110004 (2005-05-01), Parkin et al.
patent: 2007/0228501 (2007-10-01), Nakamura et al.

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