Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1979-11-08
1981-07-14
Massie, Jerome W.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 29580, 148 15, 148187, 156628, 156657, 156662, H01L 21308
Patent
active
042778832
ABSTRACT:
A method for forming a semiconductor structure is disclosed wherein a masking layer used to form the gate contact of a Metal Electrode Semiconductor Field Effect Transistor (MESFET) is formed by selectively depositing particles into separated regions of the masking layer, diffusing the particles into the portions of the masking layer to reduce the separation between the regions to a predetermined separation and exposing the masking layer to a chemical etchant to selectively remove the portions of the masking layer which have a particle concentration below a predetermined concentration, producing an aperture in the masking layer having a predetermined width. With such method a well controlled diffusion process and selective chemical etching process are used to form such aperture which, in turn, is used to form a gate contact for a MESFET having a gate channel length in the order of a micron.
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Massie Jerome W.
Pannone Joseph D.
Raytheon Company
Sharkansky Richard M.
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