Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2011-06-14
2011-06-14
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257SE27108
Reexamination Certificate
active
07960759
ABSTRACT:
A circuit32is provided comprising a first diffusion region34and a parallel second diffusion region36. A sequence of N gate layers40, 42, 46is provided with a first and an Nth of these gate layers covering different respective ones of the diffusion regions34, 36whilst the middle (N−2) gate layers42cover both diffusion regions34, 36. A bridging conductor64connects the first gate layer40and the Nth gate layer46. In some embodiments, the second diffusion region is provided as two second diffusion sub-regions68, 70having a diffusion region gap74therebetween and electrically connected via a jumper connector42. A first gate layer76which forms a gate electrode with a first diffusion region66can extend through this diffusion region gap74not forming a gate electrode therewith and facilitating use of a collinear bridging conductor82to connect to the Nth gate layer80.
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Clark David Paul
Frederick Marlin Wayne
ARM Limited
Budd Paul A
Jackson, Jr. Jerome
Nixon & Vanderhye P.C.
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