Integrated circuit isolation

Metal working – Method of mechanical manufacture – Assembling or joining

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29578, 29580, 148DIG50, 357 50, H01L 2176

Patent

active

045803307

ABSTRACT:
An integrated circuit isolation technology wherein the nitride-sidewall methods of the prior art are improved by performing an undercut and backfill before the second nitride (the sidewall nitride which prevents encroachment) is added to the first nitride (which covers the moat areas). Thus, the butt joint between the two nitrides is made more secure, and localized bird's-beaking at the butt joint between the moat nitride and the sidewall nitride does not occur.

REFERENCES:
patent: 4462846 (1984-07-01), Varshney
Chiu, K. Y. et al., "The Sloped-Wall SWAMI . . . Technology" in IEEE Transactions on Electron Devices, vol. Ed-30, No. 11, Nov.-1983, pp. 1506-1511.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit isolation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2058436

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.