Integrated circuit interconnection employing tungsten/aluminum l

Details Integrated circuit interconnection employing tungsten/aluminum l Integrated circuit interconnection employing tungsten/aluminum l

1998-02-17

2000-01-18

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257764, 257765, 257382, H01L 2348, H01L 2352, H01L 2940

Patent

active

06016008&

ABSTRACT:
An improved integrated circuit interconnection for interconnecting at least two conductive regions within an integrated circuit, and method for producing the same. The interconnection includes a tungsten layer and a barrier layer to provide a low contact resistance within the interconnection and between the conductive regions and the interconnection. The interconnection also includes an aluminum layer for providing a low sheet resistance in the current path between the two conductive regions. Thus the invention combines the advantages of an all tungsten interconnection with those of a tungsten capsuled aluminum interconnection.

REFERENCES:
patent: 4997789 (1991-03-01), Keller et al.
patent: 5141897 (1992-08-01), Manocha et al.
patent: 5155063 (1992-10-01), Ito
patent: 5192703 (1993-03-01), Lee et al.
patent: 5200539 (1993-04-01), Stanley et al.
patent: 5202287 (1993-04-01), Joshi et al.
patent: 5219789 (1993-06-01), Adan

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