Semiconductor device manufacturing: process – Chemical etching – Altering etchability of substrate region by compositional or...
Patent
1997-11-06
1999-03-30
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Altering etchability of substrate region by compositional or...
438694, 438697, 438725, H01L 21302
Patent
active
058889051
ABSTRACT:
A intermetal level dielectrics with fluorinated (co)polymers of parylene (142) between metal lines (112-120), and vapor deposition method for the (co)polymerization followed by fluorination of the (co)polymers.
REFERENCES:
patent: 4946549 (1990-08-01), Bachman et al.
patent: 5268202 (1993-12-01), You et al.
Eissa Mona
Taylor Kelly J.
Brady W. James
Donaldson Richard L.
Goudreau George
Hoel Carlton H.
Texas Instruments Incorporated
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