Integrated circuit inductors

Inductor devices – Coil or coil turn supports or spacers – Printed circuit-type coil

Reexamination Certificate

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Details

C336S232000, C336S223000, C029S602100, C029S605000

Reexamination Certificate

active

07135951

ABSTRACT:
Integrated circuit inductors may be formed using a spiral layout on the surface of an interconnect dielectric stack. Conductive lines from two or more metal layers in the interconnect stack may be electrically connected using one or more via trenches. The via trench interconnection arrangement reduces the resistance of the inductor and increases the inductor's Q-factor. The Q-factor of the inductor may also be increased by placing a region of n-type and p-type wells or a metal plate region beneath the inductor to reduce power losses during operation. Shallow trench isolation may be used to reduce eddy currents and increase Q. The effects of copper dishing and trench blow-out may be used during inductor fabrication. A dual damascene fabrication process may be used.

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Xiao Huo, “Silicon-based High-O Inductors Incorporating Electroplated Copper and Low-K BCB Dielectric” IEEE Electron Device Lett. vol. 23, No. 9, Sep. 2002; pp. 520-522.

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